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EV1HMC8412LP2F|ADI|simage
EV1HMC8412LP2F|ADI|limage
RF/Wireless Development Boards and Kits

EV1HMC8412LP2F

HMC8412 RF Amplifier Evaluation Board

Analog Devices
Datasheets 

The HMC8412 provides a typical gain of 15.5 dB, a 1.4 dB typical noise figure, and a typical output third-order intercept (OIP3) of ≤33 dBm, requiring only 60 mA from a 5 V drain supply voltage. The saturated output power (PSAT) of ≤20.5 dBm typical enables the low noise amplifier (LNA) to function as a local oscillator (LO) driver for many Analog Devices, Inc., balanced, inphase and quadrature (I/Q) or image rejection mixers.

The HMC8412 also features inputs and outputs that are internally matched to 50 Ω, making the device ideal for surface-mount technology (SMT)-based, high capacity microwave radio applications. The HMC8412 is housed in an RoHS-compliant, 2 mm × 2 mm, 6-lead LFCSP.

Low Noise Wideband Amplifier offers significant space savings

  • • 0.4 GHz to 11 GHz operation for robust instrumentation and communications
  • • Improves overall system noise and linearity
  • • Compact 2 x 2 mm package

Key Features and Benefits

  • • Improves overall system noise with a Noise Figure = 1.4 dB
  • • Improves overall system linearity with an IP3 = 33 dBm
  • • Small footprint, saving overall board space, Package size 2x2 mm. Previous Generation was 5x5 mm

Applications

  • • Aerospace/Defense: Electronic Warfare
  • • Instrumentation: Wideband test
  • • General Purpose

Block Diagrams and Tables

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Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    EV1HMC8412LP2F
  • Automotive
    No
  • PPAP
    No
  • Type
    Evaluation Board
  • Supported Device
    HMC8412
  • Supported Device Technology
    RF Amplifier
  • Typical Operating Frequency (MHz)
    11000(Max)
  • Typical Operating Supply Voltage (V)
    5
  • Minimum Operating Temperature (°C)
    -40
  • Maximum Operating Temperature (°C)
    85

Documentation and Resources

Datasheets
Design resources