EV1HMC8412LP2F
HMC8412 RF Amplifier Evaluation Board
Analog DevicesThe HMC8412 provides a typical gain of 15.5 dB, a 1.4 dB typical noise figure, and a typical output third-order intercept (OIP3) of ≤33 dBm, requiring only 60 mA from a 5 V drain supply voltage. The saturated output power (PSAT) of ≤20.5 dBm typical enables the low noise amplifier (LNA) to function as a local oscillator (LO) driver for many Analog Devices, Inc., balanced, inphase and quadrature (I/Q) or image rejection mixers.
The HMC8412 also features inputs and outputs that are internally matched to 50 Ω, making the device ideal for surface-mount technology (SMT)-based, high capacity microwave radio applications. The HMC8412 is housed in an RoHS-compliant, 2 mm × 2 mm, 6-lead LFCSP.
Low Noise Wideband Amplifier offers significant space savings
- • 0.4 GHz to 11 GHz operation for robust instrumentation and communications
- • Improves overall system noise and linearity
- • Compact 2 x 2 mm package
Key Features and Benefits
- • Improves overall system noise with a Noise Figure = 1.4 dB
- • Improves overall system linearity with an IP3 = 33 dBm
- • Small footprint, saving overall board space, Package size 2x2 mm. Previous Generation was 5x5 mm
Applications
- • Aerospace/Defense: Electronic Warfare
- • Instrumentation: Wideband test
- • General Purpose
Block Diagrams and Tables
Related Evaluation Board
Product Technical Specifications
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
EV1HMC8412LP2F
Automotive
No
PPAP
No
Type
Evaluation Board
Supported Device
HMC8412
Supported Device Technology
RF Amplifier
Typical Operating Frequency (MHz)
11000(Max)
Typical Operating Supply Voltage (V)
5
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
85

