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ECH8667TLHX|ONSEMI|simage
ECH8667TLHX|ONSEMI|limage
MOSFETs

ECH8667-TL-HX

Trans MOSFET P-CH Si 30V 5.5A 8-Pin ECH T/R

onsemi
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    Obsolete
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Material
    Si
  • Configuration
    Dual Dual Drain
  • Channel Mode
    Enhancement
  • Channel Type
    P
  • Number of Elements per Chip
    2
  • Maximum Drain-Source Voltage (V)
    30
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Continuous Drain Current (A)
    5.5
  • Maximum Drain-Source Resistance (mOhm)
    39@10V
  • Typical Gate Charge @ Vgs (nC)
    13@10V
  • Typical Input Capacitance @ Vds (pF)
    600@10V
  • Maximum Power Dissipation (mW)
    1500
  • Typical Fall Time (ns)
    42
  • Typical Rise Time (ns)
    23
  • Typical Turn-Off Delay Time (ns)
    63
  • Typical Turn-On Delay Time (ns)
    7.2
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    0.93(Max)
  • Package Width
    2.3
  • Package Length
    2.9
  • PCB changed
    8
  • Supplier Package
    ECH
  • Pin Count
    8

Documentation and Resources

Datasheets
Design resources