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DN3545N3G|MICROCHP|simage
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MOSFETs

DN3545N3-G

Trans MOSFET N-CH Si 450V 0.136A 3-Pin TO-92 Bag

Microchip Technology
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.29.00.55
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Material
    Si
  • Configuration
    Single
  • Channel Mode
    Depletion
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    450
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Continuous Drain Current (A)
    0.136
  • Maximum Gate-Source Leakage Current (nA)
    100
  • Maximum IDSS (uA)
    200000(Min)
  • Maximum Drain-Source Resistance (mOhm)
    20000@0V
  • Typical Input Capacitance @ Vds (pF)
    360(Max)@25V
  • Typical Reverse Transfer Capacitance @ Vds (pF)
    15(Max)@25V
  • Typical Output Capacitance (pF)
    40(Max)
  • Maximum Power Dissipation (mW)
    740
  • Typical Fall Time (ns)
    40(Max)
  • Typical Rise Time (ns)
    30(Max)
  • Typical Turn-Off Delay Time (ns)
    30(Max)
  • Typical Turn-On Delay Time (ns)
    20(Max)
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Bag
  • Maximum Positive Gate-Source Voltage (V)
    20
  • Maximum Pulsed Drain Current @ TC=25°C (A)
    1.6
  • Typical Gate Plateau Voltage (V)
    1.1
  • Typical Reverse Recovery Time (ns)
    800
  • Maximum Diode Forward Voltage (V)
    1.8
  • Mounting
    Through Hole
  • Package Height
    5.33(Max)
  • Package Width
    4.19(Max)
  • Package Length
    5.21(Max)
  • PCB changed
    3
  • Standard Package Name
    TO
  • Supplier Package
    TO-92
  • Pin Count
    3
  • Lead Shape
    Formed

Documentation and Resources

Datasheets
Design resources