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DMN2250UFB7B|DIODEZTX|simage
DMN2250UFB7B|DIODEZTX|limage
MOSFETs

DMN2250UFB-7B

Trans MOSFET N-CH 20V 1.35A 3-Pin X1-DFN T/R

Diodes Incorporated
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.21.00.95
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    20
  • Maximum Gate-Source Voltage (V)
    ±8
  • Maximum Gate Threshold Voltage (V)
    1
  • Maximum Continuous Drain Current (A)
    1.35
  • Maximum Gate-Source Leakage Current (nA)
    1000
  • Maximum IDSS (uA)
    0.1
  • Maximum Drain-Source Resistance (mOhm)
    170@4.5V
  • Typical Gate Charge @ Vgs (nC)
    1.4@4.5V|3.1@10V
  • Typical Gate Charge @ 10V (nC)
    3.1
  • Typical Input Capacitance @ Vds (pF)
    94@16V
  • Maximum Power Dissipation (mW)
    500
  • Typical Fall Time (ns)
    25.4
  • Typical Rise Time (ns)
    6.1
  • Typical Turn-Off Delay Time (ns)
    59.4
  • Typical Turn-On Delay Time (ns)
    4.3
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    0.47
  • Package Width
    1
  • Package Length
    0.6
  • PCB changed
    3
  • Standard Package Name
    DFN
  • Supplier Package
    X1-DFN
  • Pin Count
    3
  • Lead Shape
    No Lead

Documentation and Resources

Datasheets
Design resources