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DMG1029SV7|DIODEZTX|simage
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MOSFETs

DMG1029SV-7

Trans MOSFET N/P-CH 60V 0.5A/0.36A 6-Pin SOT-563 T/R

Diodes Incorporated
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    NRND
  • HTS
    8541.29.00.55
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Dual
  • Channel Mode
    Enhancement
  • Channel Type
    N|P
  • Number of Elements per Chip
    2
  • Maximum Drain-Source Voltage (V)
    60
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Gate Threshold Voltage (V)
    2.5
  • Operating Junction Temperature (°C)
    -55 to 150
  • Maximum Continuous Drain Current (A)
    0.5@N Channel|0.36@P Channel
  • Maximum Gate-Source Leakage Current (nA)
    50
  • Maximum IDSS (uA)
    0.01
  • Maximum Drain-Source Resistance (mOhm)
    1700@10V@N Channel|4000@10V@P Channel
  • Typical Gate Charge @ Vgs (nC)
    0.3@4.5V@N Channel|0.28@4.5V@P Channel
  • Typical Input Capacitance @ Vds (pF)
    25@25V
  • Maximum Power Dissipation (mW)
    1000
  • Typical Fall Time (ns)
    11.6
  • Typical Rise Time (ns)
    7.9
  • Typical Turn-Off Delay Time (ns)
    10.6
  • Typical Turn-On Delay Time (ns)
    5.5
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Supplier Temperature Grade
    Automotive
  • Packaging
    Tape and Reel
  • Maximum Positive Gate-Source Voltage (V)
    20
  • Maximum Diode Forward Voltage (V)
    1.4
  • Mounting
    Surface Mount
  • Package Height
    0.6(Max)
  • Package Width
    1.2
  • Package Length
    1.6
  • PCB changed
    6
  • Standard Package Name
    SOT
  • Supplier Package
    SOT-563
  • Pin Count
    6
  • Lead Shape
    Flat

Documentation and Resources

Datasheets
Design resources