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D3V3F4U10LP7|DIODEZTX|simage
D3V3F4U10LP7|DIODEZTX|limage
ESD Suppressors

D3V3F4U10LP-7

ESD Suppressor Diode Array Uni-Dir 3.3V 10-Pin UDFN T/R

Diodes Incorporated
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.10.00.80
  • Automotive
    No
  • PPAP
    No
  • Type
    Diode Array
  • Configuration
    Quad Common Anode
  • Direction Type
    Uni-Directional
  • Number of Elements per Chip
    4
  • Maximum Working Voltage (V)
    3.3
  • Minimum Breakdown Voltage (V)
    5.5
  • Maximum Clamping Voltage (V)
    5(Typ)
  • Maximum Peak Pulse Current (A)
    5@8/20us
  • Maximum Reverse Leakage Current (uA)
    1
  • Test Current (mA)
    1
  • Maximum Power Dissipation (mW)
    350(Typ)
  • Peak Pulse Power Dissipation (W)
    30
  • Capacitance Value (pF)
    0.5(Typ)
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    0.55
  • Package Width
    1
  • Package Length
    2.5
  • PCB changed
    10
  • Standard Package Name
    DFN
  • Supplier Package
    UDFN
  • Pin Count
    10

Documentation and Resources

Datasheets
Design resources