Product Technical Specifications
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.55
Automotive
No
PPAP
No
Category
Power MOSFET
Material
Si
Configuration
Dual Common Dual Source
Channel Mode
Enhancement
Number of Elements per Chip
2
Maximum Drain-Source Voltage (V)
40
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
7
Maximum Continuous Drain Current (A)
4
Maximum Gate-Source Leakage Current (nA)
2000
Maximum IDSS (uA)
2000
Typical Input Capacitance @ Vds (pF)
24(Max)@0V
Maximum Power Dissipation (mW)
29000
Minimum Operating Temperature (°C)
-65
Maximum Operating Temperature (°C)
200
Mounting
Surface Mount
Package Height
3.25 mm
Package Width
8.43 mm
Package Length
6.73 mm
PCB changed
8
Supplier Package
Case DBC4
Pin Count
8