RF FETs

D2219UK

Trans RF MOSFET N-CH 40V 2A 8-Pin SO

TT Electronics / Semelab

Product Technical Specifications

• EU RoHS

  Compliant

• ECCN (US)

  EAR99

• Part Status

  Active

• HTS

  8541.29.00.55

• Automotive

  No

• PPAP

  No

• Material

  Si

• Configuration

  Dual Quad Source

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  2

• Maximum Drain-Source Voltage (V)

  40

• Maximum Gate-Source Voltage (V)

  ±20

• Maximum VSWR

  20(Min)

• Maximum Continuous Drain Current (A)

  2

• Typical Input Capacitance @ Vds (pF)

  12(Max)@0V

• Maximum Power Dissipation (mW)

  17500

• Maximum Output Power (W)

  2.5

• Typical Power Gain (dB)

  10(Min)

• Maximum Frequency (MHz)

  1000

• Minimum Frequency (MHz)

  1

• Typical Drain Efficiency (%)

  40(Min)

• Minimum Operating Temperature (°C)

  -65

• Maximum Operating Temperature (°C)

  200

• Mounting

  Surface Mount

• Package Height

  2.18

• Package Width

  4.06

• Package Length

  5.08

• PCB changed

  8

• Standard Package Name

  SO

• Supplier Package

  SO

• Pin Count

  8

• Lead Shape

  Gull-wing