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RF FETs

D2022UK

Trans RF MOSFET 65V 5A 5-Pin Case DQ

TT Electronics / Semelab
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    5A991g.
  • Part Status
    Active
  • HTS
    8541.29.00.55
  • Automotive
    No
  • PPAP
    No
  • Material
    Si
  • Configuration
    Dual Common Source
  • Number of Elements per Chip
    2
  • Maximum Drain-Source Voltage (V)
    65
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Gate Threshold Voltage (V)
    7
  • Maximum VSWR
    20
  • Maximum Continuous Drain Current (A)
    5
  • Maximum Gate-Source Leakage Current (nA)
    1000
  • Maximum IDSS (uA)
    1000
  • Typical Input Capacitance @ Vds (pF)
    60(Max)@28V
  • Typical Reverse Transfer Capacitance @ Vds (pF)
    2.5(Max)@28V
  • Typical Output Capacitance @ Vds (pF)
    30(Max)@28V
  • Typical Forward Transconductance (S)
    0.9(Min)
  • Maximum Power Dissipation (mW)
    125000
  • Typical Power Gain (dB)
    13(Min)
  • Maximum Frequency (MHz)
    1000
  • Minimum Frequency (MHz)
    50
  • Typical Drain Efficiency (%)
    40(Min)
  • Minimum Operating Temperature (°C)
    -65
  • Maximum Operating Temperature (°C)
    200
  • Mounting
    Screw
  • Package Height
    5.08
  • Package Width
    6.35
  • Package Length
    18.9
  • PCB changed
    5
  • Supplier Package
    Case DQ
  • Pin Count
    5

Documentation and Resources

Datasheets
Design resources