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RF FETs

D2012UK

Trans RF MOSFET N-CH 65V 4A 3-Pin Case DP

TT Electronics / Semelab
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.29.00.55
  • Automotive
    No
  • PPAP
    No
  • Material
    Si
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    65
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum VSWR
    20(Min)
  • Maximum Continuous Drain Current (A)
    4
  • Typical Input Capacitance @ Vds (pF)
    48(Max)@0V
  • Maximum Power Dissipation (mW)
    42000
  • Maximum Output Power (W)
    10
  • Typical Power Gain (dB)
    10(Min)
  • Maximum Frequency (MHz)
    2000
  • Minimum Frequency (MHz)
    50
  • Typical Drain Efficiency (%)
    40(Min)
  • Minimum Operating Temperature (°C)
    -65
  • Maximum Operating Temperature (°C)
    200
  • Mounting
    Screw
  • Package Height
    5.08
  • Package Width
    6.35
  • Package Length
    18.92
  • PCB changed
    3
  • Supplier Package
    Case DP
  • Pin Count
    3

Documentation and Resources

Datasheets
Design resources