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RF FETs

D2005UK

Trans RF MOSFET 65V 3A 3-Pin Case DP

TT Electronics / Semelab
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.29.00.55
  • Automotive
    No
  • PPAP
    No
  • Material
    Si
  • Configuration
    Single
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    65
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum VSWR
    20(Min)
  • Maximum Continuous Drain Current (A)
    3
  • Typical Input Capacitance @ Vds (pF)
    36(Max)@0V
  • Maximum Power Dissipation (mW)
    35000
  • Maximum Output Power (W)
    7.5
  • Typical Power Gain (dB)
    13(Min)
  • Maximum Frequency (MHz)
    2000
  • Typical Drain Efficiency (%)
    40(Min)
  • Maximum Operating Temperature (°C)
    200
  • Mounting
    Screw
  • Package Height
    5.08
  • Package Width
    6.35
  • Package Length
    18.92
  • PCB changed
    3
  • Supplier Package
    Case DP
  • Pin Count
    3

Documentation and Resources

Datasheets
Design resources