Product Technical Specifications
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.55
Automotive
No
PPAP
No
Category
Power MOSFET
Material
Si
Configuration
Dual Dual Drain
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Maximum Drain-Source Voltage (V)
60
Maximum Gate-Source Voltage (V)
±20
Operating Junction Temperature (°C)
-55 to 150
Maximum Continuous Drain Current (A)
15
Maximum Drain-Source Resistance (mOhm)
15@10V
Typical Gate Charge @ Vgs (nC)
14@10V
Typical Gate Charge @ 10V (nC)
14
Typical Gate to Drain Charge (nC)
2.3
Typical Gate to Source Charge (nC)
4.6
Typical Input Capacitance @ Vds (pF)
1080@30V
Maximum Power Dissipation (mW)
2100
Typical Fall Time (ns)
19
Typical Rise Time (ns)
15
Typical Turn-Off Delay Time (ns)
5
Typical Turn-On Delay Time (ns)
6
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel
Typical Gate Threshold Voltage (V)
3
Mounting
Surface Mount
Package Height
1.5(Max)
Package Width
3.9
Package Length
4.91
PCB changed
8
Standard Package Name
SO
Supplier Package
SOIC
Pin Count
8
Lead Shape
Gull-wing