Arrow Electronic Components Online
CSD25304W1015|TI|simage
CSD25304W1015|TI|limage
MOSFETs

CSD25304W1015

Trans MOSFET P-CH 20V 3A 6-Pin DSBGA T/R

Texas Instruments

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    COMPONENTS
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single Dual Drain Triple Source
  • Channel Mode
    Enhancement
  • Channel Type
    P
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    20
  • Maximum Gate-Source Voltage (V)
    ±8
  • Maximum Gate Threshold Voltage (V)
    1.15
  • Maximum Continuous Drain Current (A)
    3
  • Maximum Gate-Source Leakage Current (nA)
    100
  • Maximum IDSS (uA)
    1
  • Maximum Drain-Source Resistance (mOhm)
    32.5@4.5V
  • Typical Gate Charge @ Vgs (nC)
    3.3@4.5V
  • Typical Gate to Drain Charge (nC)
    0.5
  • Typical Input Capacitance @ Vds (pF)
    458@10V
  • Maximum Power Dissipation (mW)
    750
  • Typical Fall Time (ns)
    10
  • Typical Rise Time (ns)
    4
  • Typical Turn-Off Delay Time (ns)
    24
  • Typical Turn-On Delay Time (ns)
    6
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Typical Gate Threshold Voltage (V)
    0.8
  • Mounting
    Surface Mount
  • Package Height
    0.28(Max)
  • Package Width
    1(Max)
  • Package Length
    1.49(Max)
  • PCB changed
    6
  • Standard Package Name
    BGA
  • Supplier Package
    DSBGA
  • Pin Count
    6
  • Lead Shape
    Ball

Documentation and Resources

Datasheets
Design resources