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CSD17570Q5B|TI|simage
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MOSFETs

CSD17570Q5B

Trans MOSFET N-CH Si 30V 100A 8-Pin VSON-CLIP EP T/R

Texas Instruments

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    COMPONENTS
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Material
    Si
  • Configuration
    Single Quad Drain Triple Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    30
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Gate Threshold Voltage (V)
    1.9
  • Operating Junction Temperature (°C)
    -55 to 150
  • Maximum Continuous Drain Current (A)
    100
  • Maximum Gate-Source Leakage Current (nA)
    100
  • Maximum IDSS (uA)
    1
  • Maximum Drain-Source Resistance (mOhm)
    0.69@10V
  • Typical Gate Charge @ Vgs (nC)
    93@4.5V
  • Typical Gate to Drain Charge (nC)
    34
  • Typical Gate to Source Charge (nC)
    27
  • Typical Reverse Recovery Charge (nC)
    34
  • Typical Input Capacitance @ Vds (pF)
    10400@15V
  • Typical Reverse Transfer Capacitance @ Vds (pF)
    877@15V
  • Minimum Gate Threshold Voltage (V)
    1.1
  • Typical Output Capacitance (pF)
    1450
  • Maximum Power Dissipation (mW)
    3200
  • Typical Fall Time (ns)
    74
  • Typical Rise Time (ns)
    36
  • Typical Turn-Off Delay Time (ns)
    144
  • Typical Turn-On Delay Time (ns)
    5
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Typical Drain-Source Resistance @ 25°C (mOhm)
    0.56@10V|0.74@4.5V
  • Maximum Power Dissipation on PCB @ TC=25°C (W)
    3.2
  • Maximum Pulsed Drain Current @ TC=25°C (A)
    400
  • Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
    50
  • Typical Diode Forward Voltage (V)
    0.8
  • Typical Gate Plateau Voltage (V)
    2.3
  • Typical Reverse Recovery Time (ns)
    51
  • Maximum Diode Forward Voltage (V)
    1
  • Typical Gate Threshold Voltage (V)
    1.5
  • Maximum Gate Resistance (Ohm)
    3.6
  • Maximum Positive Gate-Source Voltage (V)
    20
  • Maximum Continuous Drain Current on PCB @ TC=25°C (A)
    53
  • Mounting
    Surface Mount
  • Package Height
    0.88
  • Package Width
    6
  • Package Length
    5
  • PCB changed
    8
  • Standard Package Name
    SON
  • Supplier Package
    VSON-CLIP EP
  • Pin Count
    8
  • Lead Shape
    No Lead

Documentation and Resources

Datasheets
Design resources