Product Technical Specifications
EU RoHS
Compliant with Exemption
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.55
SVHC
Yes
SVHC Exceeds Threshold
Yes
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Single Quad Drain
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
30
Maximum Gate-Source Voltage (V)
±20
Operating Junction Temperature (°C)
-55 to 150
Maximum Continuous Drain Current (A)
6
Maximum Gate-Source Leakage Current (nA)
10000
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
43@10V
Typical Gate Charge @ Vgs (nC)
13@10V
Typical Gate Charge @ 10V (nC)
13
Typical Gate to Drain Charge (nC)
3.2
Typical Gate to Source Charge (nC)
1.8
Typical Input Capacitance @ Vds (pF)
600@10V
Typical Reverse Transfer Capacitance @ Vds (pF)
110@10V
Typical Output Capacitance (pF)
145
Maximum Power Dissipation (mW)
1600
Typical Fall Time (ns)
45
Typical Rise Time (ns)
27
Typical Turn-Off Delay Time (ns)
62
Typical Turn-On Delay Time (ns)
7.4
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel
Typical Drain-Source Resistance @ 25°C (mOhm)
61@4V|58@4.5V|33@10V
Maximum Positive Gate-Source Voltage (V)
20
Maximum Pulsed Drain Current @ TC=25°C (A)
24
Typical Diode Forward Voltage (V)
0.87
Typical Gate Plateau Voltage (V)
3
Maximum Diode Forward Voltage (V)
1.2
Mounting
Surface Mount
Package Height
0.9
Package Width
1.6
Package Length
2.9
PCB changed
6
Standard Package Name
SOT
Supplier Package
CPH
Pin Count
6
Lead Shape
Gull-wing
Order Quantity