RF FETs

CE3512K2-C1

Trans RF FET N-CH 4V 0.068A 4-Pin Micro-X T/R

California Eastern Laboratories

Product Technical Specifications

• EU RoHS

  Compliant

• ECCN (US)

  EAR99

• Part Status

  Active

• HTS

  8541.21.00.75

• Automotive

  No

• PPAP

  No

• Configuration

  Single Dual Source

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  4

• Maximum Gate-Source Voltage (V)

  -3

• Maximum Continuous Drain Current (A)

  0.068

• Maximum Gate-Source Leakage Current (nA)

  10000

• Maximum IDSS (uA)

  68000

• Typical Forward Transconductance (S)

  0.069

• Maximum Power Dissipation (mW)

  125000

• Typical Power Gain (dB)

  13.7

• Maximum Frequency (MHz)

  12000

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tape and Reel

• Mounting

  Surface Mount

• Package Height

  1.5(Max)

• Package Width

  2.6

• Package Length

  2.6

• PCB changed

  4

• Supplier Package

  Micro-X

• Pin Count

  4