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MOSFETs

CCB032M12FM3 | Wolfspeed WolfPACK SiC Power Module

1200V silicon carbide six-pack power module delivering maximum power density

WOLFSPEED, INC
Datasheets 

Overview

Wolfspeed’s WolfPACK family of power modules enables greater flexibility and scalability for designers by housing several Silicon Carbide MOSFETs inside a container with press-fit, solder-less pins to interface with an external PCB.

The modules feature application-specific pinouts optimized based on the internal arrangement of the MOSFETs, such as half-bridge, full-bridge, six-pack, and buck/boost layouts. High power density in a small baseplate-less footprint, coupled with SiC technology, enables compact layout, faster, cleaner switching, and affords designers as much as a 25% reduction in size. All configurations are available with the option of pre-applied thermal interface material.



Silicon Carbide Power Module Benefits

  • •  Maximum power density
  • •  Ease of layout and assembly
  • •  System scalability and reliability
  • •  Simpler cooling systems and smaller systems


Silicon Carbide Power Module Features

  • •  Leading silicon carbide MOSFET technology in an industry standard form factor
  • •  Highest current rated topologies commercially available
  • •  Built in NTC
  • •  Press fit connections


Wolfspeed WolfPACK Product Portfolio


R(ON) at 25℃ Product SKU   Configuration  Package   Blocking Voltage  
11mΩ CAB011M12FM3 Half-Bridge FM3 1200V
16mΩ CAB016M12FM3 Half-Bridge FM3 1200V
21mΩ CCB021M12FM3 6-pack FM3 1200V
32mΩ CCB032M12FM3 6-pack FM3 1200V
21mΩ CBB021M12FM3 Full Bridge FM3 1200V
32mΩ CBB032M12FM3 Full Bridge FM3 1200V
6mΩ CAB006M12GM3 Half-Bridge GM3 1200V
6mΩ CAB006A12GM3 Half-Bridge GM3 1200V
8mΩ CAB008M12GM3 Half-Bridge GM3 1200V
8mΩ CAB008A12GM3 Half-Bridge GM3 1200V
16mΩ CCB016M12GM3 Half-Bridge GM3 1200V
11mΩ XCAB011A12GM3 Half-Bridge GM3 1200V


Silicon Carbide Power Module Applications

WolfPACK modules enable multiple configurations across power levels for electric vehicle fast charging, industrial power, uninterruptible power supply, induction heating and welding, industrial motor drive, power supply, solar and renewable energy, residential and commercial energy storage systems, string inverters, and grid infrastructure applications.



Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.29.00.55
  • SVHC
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Material
    SiC
  • Configuration
    Hex
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    6
  • Maximum Drain-Source Voltage (V)
    1200
  • Maximum Gate-Source Voltage (V)
    23
  • Maximum Gate Threshold Voltage (V)
    3.9
  • Maximum Continuous Drain Current (A)
    30
  • Maximum Gate-Source Leakage Current (nA)
    250
  • Maximum IDSS (uA)
    100
  • Maximum Drain-Source Resistance (mOhm)
    45.7@15V
  • Typical Gate Charge @ Vgs (nC)
    118@15V
  • Typical Input Capacitance @ Vds (pF)
    3400@800V
  • Maximum Power Dissipation (mW)
    83000(Typ)
  • Minimum Operating Temperature (°C)
    -40
  • Maximum Operating Temperature (°C)
    125
  • Supplier Temperature Grade
    Industrial
  • Packaging
    Box
  • Mounting
    Screw
  • Package Height
    12
  • Package Width
    33.5
  • Package Length
    62.8
  • PCB changed
    23
  • Pin Count
    23

Documentation and Resources

Datasheets
Design resources