CCB032M12FM3 | Wolfspeed WolfPACK SiC Power Module
1200V silicon carbide six-pack power module delivering maximum power density
WOLFSPEED, INCOverview
Wolfspeed’s WolfPACK family of power modules enables greater flexibility and scalability for designers by housing several Silicon Carbide MOSFETs inside a container with press-fit, solder-less pins to interface with an external PCB.
The modules feature application-specific pinouts optimized based on the internal arrangement of the MOSFETs, such as half-bridge, full-bridge, six-pack, and buck/boost layouts. High power density in a small baseplate-less footprint, coupled with SiC technology, enables compact layout, faster, cleaner switching, and affords designers as much as a 25% reduction in size. All configurations are available with the option of pre-applied thermal interface material.
Silicon Carbide Power Module Benefits
- • Maximum power density
- • Ease of layout and assembly
- • System scalability and reliability
- • Simpler cooling systems and smaller systems
Silicon Carbide Power Module Features
- • Leading silicon carbide MOSFET technology in an industry standard form factor
- • Highest current rated topologies commercially available
- • Built in NTC
- • Press fit connections
Wolfspeed WolfPACK Product Portfolio
| R(ON) at 25℃ | Product SKU | Configuration | Package | Blocking Voltage |
| 11mΩ | CAB011M12FM3 | Half-Bridge | FM3 | 1200V |
| 16mΩ | CAB016M12FM3 | Half-Bridge | FM3 | 1200V |
| 21mΩ | CCB021M12FM3 | 6-pack | FM3 | 1200V |
| 32mΩ | CCB032M12FM3 | 6-pack | FM3 | 1200V |
| 21mΩ | CBB021M12FM3 | Full Bridge | FM3 | 1200V |
| 32mΩ | CBB032M12FM3 | Full Bridge | FM3 | 1200V |
| 6mΩ | CAB006M12GM3 | Half-Bridge | GM3 | 1200V |
| 6mΩ | CAB006A12GM3 | Half-Bridge | GM3 | 1200V |
| 8mΩ | CAB008M12GM3 | Half-Bridge | GM3 | 1200V |
| 8mΩ | CAB008A12GM3 | Half-Bridge | GM3 | 1200V |
| 16mΩ | CCB016M12GM3 | Half-Bridge | GM3 | 1200V |
| 11mΩ | XCAB011A12GM3 | Half-Bridge | GM3 | 1200V |
Silicon Carbide Power Module Applications
WolfPACK modules enable multiple configurations across power levels for electric vehicle fast charging, industrial power, uninterruptible power supply, induction heating and welding, industrial motor drive, power supply, solar and renewable energy, residential and commercial energy storage systems, string inverters, and grid infrastructure applications.
Product Technical Specifications
EU RoHS
Compliant with Exemption
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.55
SVHC
Yes
Automotive
No
PPAP
No
Category
Power MOSFET
Material
SiC
Configuration
Hex
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
6
Maximum Drain-Source Voltage (V)
1200
Maximum Gate-Source Voltage (V)
23
Maximum Gate Threshold Voltage (V)
3.9
Maximum Continuous Drain Current (A)
30
Maximum Gate-Source Leakage Current (nA)
250
Maximum IDSS (uA)
100
Maximum Drain-Source Resistance (mOhm)
45.7@15V
Typical Gate Charge @ Vgs (nC)
118@15V
Typical Input Capacitance @ Vds (pF)
3400@800V
Maximum Power Dissipation (mW)
83000(Typ)
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
125
Supplier Temperature Grade
Industrial
Packaging
Box
Mounting
Screw
Package Height
12
Package Width
33.5
Package Length
62.8
PCB changed
23
Pin Count
23

