Product Technical Specifications
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Obsolete
HTS
8541.29.00.95
Automotive
No
PPAP
No
Category
Power MOSFET
Material
SiC
Configuration
Dual
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Maximum Drain-Source Voltage (V)
1700
Maximum Gate-Source Voltage (V)
25
Maximum Gate Threshold Voltage (V)
2.5(Typ)
Operating Junction Temperature (°C)
-40 to 150
Maximum Continuous Drain Current (A)
325(Typ)
Maximum Gate-Source Leakage Current (nA)
600
Maximum IDSS (uA)
2000
Maximum Drain-Source Resistance (mOhm)
10@20V
Typical Gate Charge @ Vgs (nC)
1076@20V
Typical Gate to Drain Charge (nC)
324
Typical Gate to Source Charge (nC)
273
Typical Input Capacitance @ Vds (pF)
20000@1000V
Typical Reverse Transfer Capacitance @ Vds (pF)
80@1000V
Minimum Gate Threshold Voltage (V)
1.8
Typical Output Capacitance (pF)
2500
Maximum Power Dissipation (mW)
1866000(Typ)
Typical Fall Time (ns)
56
Typical Rise Time (ns)
72
Typical Turn-Off Delay Time (ns)
211
Typical Turn-On Delay Time (ns)
105
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
125
Supplier Temperature Grade
Industrial
Packaging
Box
Typical Drain-Source Resistance @ 25°C (mOhm)
8@20V
Maximum Pulsed Drain Current @ TC=25°C (A)
900(Typ)
Typical Diode Forward Voltage (V)
1.7
Typical Gate Plateau Voltage (V)
7
Maximum Diode Forward Voltage (V)
2
Typical Gate Threshold Voltage (V)
2.5
Maximum Positive Gate-Source Voltage (V)
25
Mounting
Screw
Package Height
30
Package Width
61.4
Package Length
106.4
PCB changed
7
Pin Count
7