Product Technical Specifications
EU RoHS
Compliant with Exemption
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.55
Automotive
No
PPAP
No
Category
Power MOSFET
Material
SiC
Configuration
Dual
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Maximum Drain-Source Voltage (V)
1200
Maximum Gate-Source Voltage (V)
19
Maximum Gate Threshold Voltage (V)
3.6
Maximum Continuous Drain Current (A)
494(Typ)
Maximum Gate-Source Leakage Current (nA)
1300
Maximum IDSS (uA)
160
Maximum Drain-Source Resistance (mOhm)
4.2@15V
Typical Gate Charge @ Vgs (nC)
1055@15V
Typical Input Capacitance @ Vds (pF)
30700@800V
Maximum Power Dissipation (mW)
1364000(Typ)
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
175
Supplier Temperature Grade
Industrial
Packaging
Box
Mounting
Screw
Package Height
15.75 mm
Package Width
53 mm
Package Length
80 mm
PCB changed
10
Pin Count
10