Product Technical Specifications
Part Status
Active
HTS
8541.29.00.55
Automotive
Yes
PPAP
No
Category
Power MOSFET
Material
SiC
Configuration
Dual
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Maximum Drain-Source Voltage (V)
1200
Maximum Gate-Source Voltage (V)
19
Operating Junction Temperature (°C)
-40 to 175
Maximum Continuous Drain Current (A)
200
Maximum Drain-Source Resistance (mOhm)
5.2@15V
Typical Gate Charge @ Vgs (nC)
1144@15V
Typical Input Capacitance @ Vds (pF)
26400@800V
Maximum Power Dissipation (mW)
584000(Typ)
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
125
Supplier Temperature Grade
Industrial
Mounting
Screw
Package Height
12.33
Package Width
56.7
Package Length
62.8
PCB changed
36
Pin Count
36