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MOSFETs

C3M0120100J

Trans MOSFET N-CH SiC 1KV 22A 8-Pin(7+Tab) D2PAK Tube

WOLFSPEED, INC
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    Obsolete
  • HTS
    8541.29.00.95
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Material
    SiC
  • Configuration
    Single Hex Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    1000
  • Maximum Gate-Source Voltage (V)
    19
  • Maximum Gate Threshold Voltage (V)
    3.5
  • Operating Junction Temperature (°C)
    -55 to 150
  • Maximum Continuous Drain Current (A)
    22
  • Maximum Gate-Source Leakage Current (nA)
    250
  • Maximum IDSS (uA)
    100
  • Maximum Drain-Source Resistance (mOhm)
    155@15V
  • Typical Gate Charge @ Vgs (nC)
    18@15V
  • Typical Input Capacitance @ Vds (pF)
    414@600V
  • Maximum Power Dissipation (mW)
    83000
  • Typical Fall Time (ns)
    6
  • Typical Rise Time (ns)
    8
  • Typical Turn-Off Delay Time (ns)
    14
  • Typical Turn-On Delay Time (ns)
    6
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Supplier Temperature Grade
    Industrial
  • Packaging
    Tube
  • Mounting
    Surface Mount
  • Package Height
    4.57(Max)
  • Package Width
    9.13(Max)
  • Package Length
    10.23(Max)
  • PCB changed
    7
  • Tab
    Tab
  • Standard Package Name
    TO
  • Supplier Package
    D2PAK
  • Pin Count
    8

Documentation and Resources

Datasheets
Design resources