GP BJT

BUJ302AX

Trans GP BJT NPN 400V 4A 26000mW 3-Pin(3+Tab) TO-220F

WeEn Semiconductors Co., Ltd

Product Technical Specifications

• EU RoHS

  Compliant with Exemption

• ECCN (US)

  EAR99

• Part Status

  Active

• HTS

  EA

• SVHC

  Yes

• SVHC Exceeds Threshold

  Yes

• Automotive

  Unknown

• PPAP

  Unknown

• Type

  NPN

• Category

  Bipolar Power

• Material

  Si

• Configuration

  Single

• Number of Elements per Chip

  1

• Maximum Collector-Emitter Voltage (V)

  400

• Maximum Base-Emitter Voltage (V)

  24

• Maximum Base-Emitter Saturation Voltage (V)

  1.5@1A@3.5A

• Maximum Collector-Emitter Saturation Voltage (V)

  0.5@0.2A@1A|1.5@1A@3.5A

• Maximum DC Collector Current (A)

  4

• Minimum DC Current Gain

  48@0.1A@5V|25@0.8A@3V

• Maximum Power Dissipation (mW)

  26000

• Minimum Operating Temperature (°C)

  -65

• Maximum Operating Temperature (°C)

  150

• Mounting

  Through Hole

• Package Height

  15.8(Max) mm

• Package Width

  4.6(Max) mm

• Package Length

  10.3(Max) mm

• PCB changed

  3

• Tab

  Tab

• Supplier Package

  TO-220F

• Pin Count

  3