GP BJT

BUJ105AD,118

Trans GP BJT NPN 400V 8A 80000mW 3-Pin(2+Tab) DPAK T/R

WeEn Semiconductors Co., Ltd

Product Technical Specifications

• 欧盟RoHS指令

  Compliant with Exemption

• 美国出口管制分类ECCN编码

  EAR99

• 环保无铅

  Active

• 美国海关商品代码

  8541.29.00.55

• SVHC

  Yes

• SVHC超标

  Yes

• Automotive

  Unknown

• PPAP

  Unknown

• Type

  NPN

• Category

  Bipolar Power

• Material

  Si

• Configuration

  Single

• Number of Elements per Chip

  1

• Maximum Collector-Base Voltage (V)

  700

• Maximum Collector-Emitter Voltage (V)

  400

• Operating Junction Temperature (°C)

  150

• Maximum Base-Emitter Saturation Voltage (V)

  1.5@0.8A@4A

• Maximum Collector-Emitter Saturation Voltage (V)

  1@0.8A@4A

• Maximum DC Collector Current (A)

  8

• Maximum Collector Cut-Off Current (nA)

  200000

• Minimum DC Current Gain

  10@1mA@5V|13@500mA@5V

• Maximum Power Dissipation (mW)

  80000

• Minimum Operating Temperature (°C)

  -65

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tape and Reel

• Mounting

  Surface Mount

• Package Height

  2.38(Max)

• Package Width

  6.22(Max)

• Package Length

  6.73(Max)

• PCB changed

  2

• Tab

  Tab

• Standard Package Name

  TO

• Supplier Package

  DPAK

• Pin Count

  3