Infineon Technologies AGBSZ110N08NS5ATMA1MOSFETs
Trans MOSFET N-CH 80V 51A 8-Pin TSDSON EP T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC Exceeds Threshold | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 80 | |
| 20 | |
| 3.8 | |
| -55 to 150 | |
| 51 | |
| 100 | |
| 1 | |
| 11@10V | |
| 15@10V | |
| 15 | |
| 3.3 | |
| 4.9 | |
| 36 | |
| 5.4 | |
| 1000@40V | |
| 11@40V | |
| 2.2 | |
| 180 | |
| 50000 | |
| 3 | |
| 3 | |
| 15 | |
| 9 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 9.6@10V|13.4@6V | |
| 204 | |
| 60 | |
| 0.88 | |
| 4.9 | |
| 36 | |
| 1.2 | |
| 3 | |
| 2 | |
| 20 | |
| Mounting | Surface Mount |
| Package Height | 1 |
| Package Width | 3.3 |
| Package Length | 3.3 |
| PCB changed | 8 |
| Standard Package Name | SON |
| Supplier Package | TSDSON EP |
| 8 | |
| Lead Shape | No Lead |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Infineon Technologies' BSZ110N08NS5ATMA1 power MOSFET can provide a solution. Its maximum power dissipation is 50000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This device is made with optimos 5 technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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