Infineon Technologies AGBSZ0909NSATMA1MOSFETs
Trans MOSFET N-CH 34V 9A 8-Pin TSDSON EP T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC Exceeds Threshold | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 34 | |
| ±20 | |
| 2 | |
| 9 | |
| 100 | |
| 1 | |
| 12@10V | |
| 6.1@4.5V|13@10V | |
| 13 | |
| 975@15V | |
| 2100 | |
| 2 | |
| 2.2 | |
| 16 | |
| 4.5 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 10@10V|12@4.5V | |
| Mounting | Surface Mount |
| Package Height | 1 |
| Package Width | 3.3 |
| Package Length | 3.3 |
| PCB changed | 8 |
| Standard Package Name | SON |
| Supplier Package | TSDSON EP |
| 8 | |
| Lead Shape | No Lead |
Looking for a component that can both amplify and switch between signals within your circuit? The BSZ0909NSATMA1 power MOSFET from Infineon Technologies provides the solution. Its maximum power dissipation is 2100 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes optimos technology.
| EDA / CAD Models |
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