Product Technical Specifications
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Obsolete
HTS
BSZ0909NDXTMA1
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Dual
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Maximum Drain-Source Voltage (V)
30
Maximum Gate-Source Voltage (V)
20
Maximum Gate Threshold Voltage (V)
2
Maximum Continuous Drain Current (A)
8.1
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
18@10V
Typical Gate Charge @ Vgs (nC)
1.8@4.5V|3.7@10V
Typical Gate Charge @ 10V (nC)
3.7
Typical Input Capacitance @ Vds (pF)
270@15V
Maximum Power Dissipation (mW)
1900(Typ)
Typical Fall Time (ns)
2
Typical Rise Time (ns)
2.5
Typical Turn-Off Delay Time (ns)
15
Typical Turn-On Delay Time (ns)
5
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Typical Drain-Source Resistance @ 25°C (mOhm)
14.5@10V|20@4.5V
Mounting
Surface Mount
Package Height
0.9(Max)
Package Width
3
Package Length
3
PCB changed
8
Standard Package Name
SON
Supplier Package
WISON EP
Pin Count
8