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BSS87115|NEXPERIA|simage
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MOSFETs

BSS87,115

Trans MOSFET N-CH 200V 0.4A 4-Pin(3+Tab) SOT-89 T/R

Nexperia
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Obsolete
  • HTS
    8541.21.00.95
  • SVHC
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single Dual Drain
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    200
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Continuous Drain Current (A)
    0.4
  • Maximum Drain-Source Resistance (mOhm)
    3000@10V
  • Typical Gate Charge @ Vgs (nC)
    5.5@10V
  • Typical Gate Charge @ 10V (nC)
    5.5
  • Typical Input Capacitance @ Vds (pF)
    100@25V
  • Maximum Power Dissipation (mW)
    1000
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    1.6(Max)
  • Package Width
    2.6(Max)
  • Package Length
    4.6(Max)
  • PCB changed
    3
  • Tab
    Tab
  • Standard Package Name
    SOT
  • Supplier Package
    SOT-89
  • Pin Count
    4

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Documentation and Resources

Datasheets
Design resources