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BSS670S2LH6433XTMA1|INFINEON|simage
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MOSFETs

BSS670S2LH6433XTMA1

Trans MOSFET N-CH 55V 0.54A 3-Pin SOT-23 T/R Automotive AEC-Q101

Infineon Technologies AG
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    LTB
  • HTS
    8541.21.00.95
  • Automotive
    Yes
  • PPAP
    Unknown
  • Category
    Power MOSFET
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    55
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Gate Threshold Voltage (V)
    2
  • Maximum Continuous Drain Current (A)
    0.54
  • Maximum Gate-Source Leakage Current (nA)
    100
  • Maximum IDSS (uA)
    0.1
  • Maximum Drain-Source Resistance (mOhm)
    650@10V
  • Typical Gate Charge @ Vgs (nC)
    1.7@10V
  • Typical Gate Charge @ 10V (nC)
    1.7
  • Typical Input Capacitance @ Vds (pF)
    56@25V
  • Maximum Power Dissipation (mW)
    360
  • Typical Fall Time (ns)
    24
  • Typical Rise Time (ns)
    25
  • Typical Turn-Off Delay Time (ns)
    21
  • Typical Turn-On Delay Time (ns)
    9
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Supplier Temperature Grade
    Automotive
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    1(Max)
  • Package Width
    1.3
  • Package Length
    2.9
  • PCB changed
    3
  • Standard Package Name
    SOT
  • Supplier Package
    SOT-23
  • Pin Count
    3
Order Quantity

Documentation and Resources

Datasheets
Design resources