MOSFETs

BSS138NH6327XTSA2

Trans MOSFET N-CH 60V 0.23A Automotive 3-Pin SOT-23 T/R

Infineon Technologies AG

Product Technical Specifications

• EU RoHS

  Compliant

• Part Status

  Active

• Automotive

  Yes

• PPAP

  Unknown

• Category

  Small Signal

• Configuration

  Single

• Process Technology

  5000nm

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  60

• Maximum Gate-Source Voltage (V)

  ±20

• Maximum Gate Threshold Voltage (V)

  1.4

• Operating Junction Temperature (°C)

  -55 to 150

• Maximum Continuous Drain Current (A)

  0.23

• Maximum Gate-Source Leakage Current (nA)

  10

• Maximum Drain-Source Resistance (mOhm)

  3500@10V

• Typical Gate Charge @ Vgs (nC)

  1@10V

• Typical Gate Charge @ 10V (nC)

  1

• Typical Gate to Drain Charge (nC)

  0.3

• Typical Gate to Source Charge (nC)

  0.1

• Typical Reverse Recovery Charge (nC)

  3.3

• Typical Input Capacitance @ Vds (pF)

  32@25V

• Typical Reverse Transfer Capacitance @ Vds (pF)

  2.8@25V

• Minimum Gate Threshold Voltage (V)

  0.6

• Typical Output Capacitance (pF)

  7.2

• Maximum Power Dissipation (mW)

  360

• Typical Fall Time (ns)

  8.2

• Typical Rise Time (ns)

  3

• Typical Turn-Off Delay Time (ns)

  6.7

• Typical Turn-On Delay Time (ns)

  2.3

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Supplier Temperature Grade

  Automotive

• Packaging

  Tape and Reel

• Typical Drain-Source Resistance @ 25°C (mOhm)

  3500@4.5V|2200@10V

• Maximum Pulsed Drain Current @ TC=25°C (A)

  0.92

• Typical Diode Forward Voltage (V)

  0.83

• Typical Gate Plateau Voltage (V)

  3.3

• Typical Reverse Recovery Time (ns)

  9.1

• Maximum Diode Forward Voltage (V)

  1.2

• Typical Gate Threshold Voltage (V)

  1

• Maximum Positive Gate-Source Voltage (V)

  20