MOSFETs
BSS123NH6327XTSA1
Trans MOSFET N-CH 100V 0.19A 3-Pin SOT-23 T/R Automotive AEC-Q101
Infineon Technologies AGProduct Technical Specifications
EU RoHS
Compliant
Part Status
Active
Automotive
Yes
PPAP
Unknown
Category
Small Signal
Configuration
Single
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
100
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
1.8
Operating Junction Temperature (°C)
-55 to 150
Maximum Continuous Drain Current (A)
0.19
Maximum Gate-Source Leakage Current (nA)
10
Maximum IDSS (uA)
0.01
Maximum Drain-Source Resistance (mOhm)
6000@10V
Typical Gate Charge @ Vgs (nC)
0.6@10V
Typical Gate Charge @ 10V (nC)
0.6
Typical Gate to Drain Charge (nC)
0.23
Typical Gate to Source Charge (nC)
0.04
Typical Reverse Recovery Charge (nC)
4.3
Typical Input Capacitance @ Vds (pF)
15.7@25V
Typical Reverse Transfer Capacitance @ Vds (pF)
2.1@25V
Minimum Gate Threshold Voltage (V)
0.8
Typical Output Capacitance (pF)
3.4
Maximum Power Dissipation (mW)
500
Typical Fall Time (ns)
22
Typical Rise Time (ns)
3.2
Typical Turn-Off Delay Time (ns)
7.4
Typical Turn-On Delay Time (ns)
2.3
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Supplier Temperature Grade
Automotive
Packaging
Tape and Reel
Typical Drain-Source Resistance @ 25°C (mOhm)
2400@10V|2700@4.5V
Maximum Power Dissipation on PCB @ TC=25°C (W)
0.5
Maximum Pulsed Drain Current @ TC=25°C (A)
0.77
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
250
Typical Diode Forward Voltage (V)
0.8
Typical Gate Plateau Voltage (V)
2.5
Typical Reverse Recovery Time (ns)
12
Maximum Diode Forward Voltage (V)
1.1
Typical Gate Threshold Voltage (V)
1.4
Maximum Positive Gate-Source Voltage (V)
20
Order Quantity