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BSR33TA|DIODEZTX|simage
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GP BJT

BSR33TA

Trans GP BJT PNP 80V 1A 2100mW 4-Pin(3+Tab) SOT-89 T/R

Diodes Incorporated
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.29.00.55
  • Automotive
    No
  • PPAP
    No
  • Type
    PNP
  • Category
    Bipolar Power
  • Configuration
    Single Dual Collector
  • Number of Elements per Chip
    1
  • Maximum Collector-Base Voltage (V)
    90
  • Maximum Collector-Emitter Voltage (V)
    80
  • Maximum Base-Emitter Voltage (V)
    5
  • Maximum Base-Emitter Saturation Voltage (V)
    1@15mA@150mA|1.2@50mA@500mA
  • Maximum Collector-Emitter Saturation Voltage (V)
    0.25@15mA@150mA|0.5@50mA@500mA
  • Maximum DC Collector Current (A)
    1
  • Minimum DC Current Gain
    30@100uA@5V|100@100mA@5V|50@500mA@5V
  • Maximum Power Dissipation (mW)
    2100
  • Minimum Operating Temperature (°C)
    -65
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    1.5
  • Package Width
    2.5
  • Package Length
    4.5
  • PCB changed
    3
  • Tab
    Tab
  • Standard Package Name
    SOT
  • Supplier Package
    SOT-89
  • Pin Count
    4
  • Lead Shape
    Flat

Documentation and Resources

Datasheets
Design resources