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BSH201215|NEXPERIA|simage
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MOSFETs

BSH201,215

Trans MOSFET P-CH 60V 0.3A 3-Pin SOT-23 T/R

Nexperia
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    NRND
  • HTS
    COMPONENTS
  • SVHC
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    P
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    60
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Gate Threshold Voltage (V)
    1.9(Typ)
  • Maximum Continuous Drain Current (A)
    0.3
  • Maximum Drain-Source Resistance (mOhm)
    2500@10V
  • Typical Gate Charge @ Vgs (nC)
    3@10V
  • Typical Gate Charge @ 10V (nC)
    3
  • Typical Gate to Drain Charge (nC)
    0.4
  • Typical Gate to Source Charge (nC)
    0.5
  • Typical Reverse Recovery Charge (nC)
    58
  • Typical Input Capacitance @ Vds (pF)
    70@48V
  • Typical Output Capacitance (pF)
    15
  • Maximum Power Dissipation (mW)
    417
  • Typical Fall Time (ns)
    20
  • Typical Rise Time (ns)
    4.5
  • Typical Turn-Off Delay Time (ns)
    45
  • Typical Turn-On Delay Time (ns)
    2
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Typical Drain-Source Resistance @ 25°C (mOhm)
    2100@10V|2700@4.5V
  • Mounting
    Surface Mount
  • Package Height
    1(Max)
  • Package Width
    1.4(Max)
  • Package Length
    3(Max)
  • PCB changed
    3
  • Standard Package Name
    SOT
  • Supplier Package
    SOT-23
  • Pin Count
    3
  • Lead Shape
    Gull-wing

Documentation and Resources

Datasheets
Design resources