Infineon Technologies AGBSD316SNH6327XTSA1MOSFETs
Trans MOSFET N-CH 30V 1.4A 6-Pin SOT-363 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| NRND | |
| 8541.21.00.95 | |
| Automotive | Yes |
| PPAP | Unknown |
| Small Signal | |
| Single Quad Drain | |
| OptiMOS 2 | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 2 | |
| 1.4 | |
| 100 | |
| 1 | |
| 160@10V | |
| 0.6@5V | |
| 71@15V | |
| 500 | |
| 1 | |
| 2.3 | |
| 5.8 | |
| 3.4 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 120@10V|192@4.5V | |
| Mounting | Surface Mount |
| Package Height | 0.9(Max) |
| Package Width | 1.25 |
| Package Length | 2 |
| PCB changed | 6 |
| Standard Package Name | SOT |
| Supplier Package | SOT-363 |
| 6 | |
| Lead Shape | Gull-wing |
Make an effective common gate amplifier using this BSD316SNH6327XTSA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 500 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes optimos 2 technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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