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BSD316SNH6327XTSA1|INFINEON|limage
BSD316SNH6327XTSA1|INFINEON|simage
MOSFETs

BSD316SNH6327XTSA1

Trans MOSFET N-CH 30V 1.4A 6-Pin SOT-363 T/R Automotive AEC-Q101

Infineon Technologies AG
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    LTB
  • HTS
    8541.21.00.95
  • Automotive
    Yes
  • PPAP
    Unknown
  • Category
    Small Signal
  • Configuration
    Single Quad Drain
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    30
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Gate Threshold Voltage (V)
    2
  • Maximum Continuous Drain Current (A)
    1.4
  • Maximum Gate-Source Leakage Current (nA)
    100
  • Maximum IDSS (uA)
    1
  • Maximum Drain-Source Resistance (mOhm)
    160@10V
  • Typical Gate Charge @ Vgs (nC)
    0.6@5V
  • Typical Input Capacitance @ Vds (pF)
    71@15V
  • Maximum Power Dissipation (mW)
    500
  • Typical Fall Time (ns)
    1
  • Typical Rise Time (ns)
    2.3
  • Typical Turn-Off Delay Time (ns)
    5.8
  • Typical Turn-On Delay Time (ns)
    3.4
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Typical Drain-Source Resistance @ 25°C (mOhm)
    120@10V|192@4.5V
  • Mounting
    Surface Mount
  • Package Height
    0.9(Max)
  • Package Width
    1.25
  • Package Length
    2
  • PCB changed
    6
  • Standard Package Name
    SOT
  • Supplier Package
    SOT-363
  • Pin Count
    6
  • Lead Shape
    Gull-wing

Documentation and Resources

Datasheets
Design resources