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BPW17N|VISHAY|limage
BPW17N|VISHAY|simage
Phototransistors

BPW17N

No Phototransistor Chip Silicon 825nm 2-Pin T-3/4 Bulk

Vishay
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.49.70.80
  • Automotive
    No
  • PPAP
    No
  • Type
    Chip
  • Phototransistor Type
    Phototransistor
  • Lens Shape Type
    Domed
  • Lens Color
    Water Clear
  • Material
    Silicon
  • Number of Channels per Chip
    1
  • Polarity
    NPN
  • Half Intensity Angle Degrees (°)
    24
  • Viewing Orientation
    Top View
  • Peak Wavelength (nm)
    825
  • Maximum Light Current (uA)
    1000(Typ)
  • Maximum Collector Current (mA)
    50
  • Maximum Dark Current (nA)
    200
  • Maximum Emitter-Collector Voltage (V)
    5
  • Maximum Collector-Emitter Voltage (V)
    32
  • Maximum Collector-Emitter Saturation Voltage (V)
    0.3
  • Maximum Power Dissipation (mW)
    100
  • Fabrication Technology
    NPN Transistor
  • Maximum Operating Temperature (°C)
    100
  • Packaging
    Bulk
  • Mounting
    Through Hole
  • Package Height
    2.9
  • Package Width
    2.4
  • Package Length
    3.3
  • PCB changed
    2
  • Supplier Package
    T-3/4
  • Pin Count
    2

Documentation and Resources

Datasheets
Design resources