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Phototransistors

BPV11

Phototransistor Chip Silicon 850nm 2-Pin T-1 3/4

Vishay
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.40.70.80
  • Automotive
    No
  • PPAP
    No
  • Type
    Chip
  • Phototransistor Type
    Phototransistor
  • Lens Shape Type
    Domed
  • Lens Color
    Water Clear
  • Material
    Silicon
  • Number of Channels per Chip
    1
  • Polarity
    NPN
  • Half Intensity Angle Degrees (°)
    30
  • Viewing Orientation
    Top View
  • Peak Wavelength (nm)
    850
  • Maximum Light Current (uA)
    10000(Typ)
  • Maximum Collector Current (mA)
    50
  • Maximum Dark Current (nA)
    50
  • Maximum Collector-Emitter Voltage (V)
    70
  • Maximum Collector-Emitter Saturation Voltage (V)
    0.3
  • Maximum Power Dissipation (mW)
    150
  • Fabrication Technology
    NPN Transistor
  • Maximum Operating Temperature (°C)
    100
  • Diameter
    5.75
  • Mounting
    Through Hole
  • Package Height
    8
  • PCB changed
    2
  • Supplier Package
    T-1 3/4
  • Pin Count
    2
  • Lead Shape
    Through Hole

Documentation and Resources

Datasheets
Design resources