RF FETs

BLS6G3135-20,112

Trans RF MOSFET N-CH 60V 2.1A 3-Pin CDFM Bulk

Ampleon

Product Technical Specifications

• EU RoHS

  Compliant

• ECCN (US)

  EAR99

• Part Status

  Active-Unconfirmed

• Automotive

  No

• PPAP

  No

• Configuration

  Single

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Mode of Operation

  Pulsed RF

• Process Technology

  0.14um

• Maximum Drain-Source Voltage (V)

  60

• Maximum Gate-Source Voltage (V)

  13

• Maximum VSWR

  5

• Maximum Continuous Drain Current (A)

  2.1

• Maximum Drain-Source Resistance (mOhm)

  580

• Typical Forward Transconductance (S)

  2.8

• Maximum Output Power (W)

  20(Typ)

• Typical Power Gain (dB)

  15.5

• Maximum Frequency (MHz)

  3500

• Minimum Frequency (MHz)

  3100

• Typical Fall Time (ns)

  10

• Typical Rise Time (ns)

  20

• Typical Drain Efficiency (%)

  45

• Minimum Operating Temperature (°C)

  -65

• Maximum Operating Temperature (°C)

  225

• Packaging

  Bulk

• Mounting

  Screw

• Package Height

  4.62(Max)

• Package Width

  10.29(Max)

• Package Length

  20.45(Max)

• PCB changed

  3

• Supplier Package

  CDFM

• Pin Count

  3