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BLP9G072220GZ|AMPLEON|simage
BLP9G072220GZ|AMPLEON|limage
RF FETs

BLP9G0722-20GZ

Trans RF MOSFET N-CH 65V 3-Pin TO-270 T/R

Ampleon
Datasheets 

Product Technical Specifications
  • EU RoHS
    Supplier Unconfirmed
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.29.00.75
  • Automotive
    No
  • PPAP
    No
  • Configuration
    Single
  • Type
    MOSFET
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Mode of Operation
    1-Carrier W-CDMA
  • Process Technology
    0.14um
  • Maximum Drain-Source Voltage (V)
    65
  • Maximum Gate-Source Voltage (V)
    13
  • Maximum Gate Threshold Voltage (V)
    2(Typ)
  • Maximum VSWR
    10
  • Maximum Gate-Source Leakage Current (nA)
    140
  • Maximum IDSS (uA)
    1.4
  • Maximum Drain-Source Resistance (mOhm)
    500(Typ)@5.75V
  • Typical Forward Transconductance (S)
    0.3
  • Maximum Output Power (W)
    20
  • Typical Power Gain (dB)
    19
  • Maximum Frequency (MHz)
    2700
  • Minimum Frequency (MHz)
    100
  • Typical Drain Efficiency (%)
    22
  • Minimum Operating Temperature (°C)
    -65
  • Maximum Operating Temperature (°C)
    225
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    2.03
  • Package Width
    6.1
  • Package Length
    9.65
  • PCB changed
    3
  • Standard Package Name
    TO
  • Supplier Package
    TO-270
  • Pin Count
    3

Documentation and Resources

Datasheets
Design resources