RF FETs

BLP10H610Z

Trans RF MOSFET N-CH 104V 12-Pin HVSON EP T/R

Ampleon

Product Technical Specifications

• EU RoHS

  Compliant

• ECCN (US)

  EAR99

• Part Status

  Active-Unconfirmed

• HTS

  8541.29.00.55

• Automotive

  Unknown

• PPAP

  Unknown

• Configuration

  Dual Common Source

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  2

• Mode of Operation

  CW

• Process Technology

  0.14um

• Maximum Drain-Source Voltage (V)

  104

• Maximum Gate-Source Voltage (V)

  11

• Maximum Gate Threshold Voltage (V)

  1.8(Typ)

• Maximum Gate-Source Leakage Current (nA)

  120

• Maximum IDSS (uA)

  1.2

• Maximum Drain-Source Resistance (mOhm)

  2300(Typ)@6V

• Maximum Output Power (W)

  20(Typ)

• Typical Power Gain (dB)

  22

• Maximum Frequency (MHz)

  1400

• Minimum Frequency (MHz)

  10

• Typical Drain Efficiency (%)

  58(Max)

• Minimum Operating Temperature (°C)

  -65

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tape and Reel

• Mounting

  Surface Mount

• Package Height

  0.82

• Package Width

  5

• Package Length

  6

• PCB changed

  12

• Standard Package Name

  SON

• Supplier Package

  HVSON EP

• Pin Count

  12