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BLP05H635XRY|AMPLEON|simage
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RF FETs

BLP05H635XRY

Trans RF MOSFET N-CH 135V 4-Pin HSOP-F T/R

Ampleon
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    Active-Unconfirmed
  • HTS
    COMPONENTS
  • Configuration
    Dual Common Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    2
  • Mode of Operation
    Pulsed RF
  • Process Technology
    0.14um
  • Maximum Drain-Source Voltage (V)
    135
  • Maximum Gate-Source Voltage (V)
    11
  • Maximum Gate Threshold Voltage (V)
    2.25
  • Maximum VSWR
    65
  • Maximum Gate-Source Leakage Current (nA)
    140
  • Maximum IDSS (uA)
    1.4
  • Maximum Drain-Source Resistance (mOhm)
    3200@6V
  • Typical Input Capacitance @ Vds (pF)
    17@50V
  • Typical Reverse Transfer Capacitance @ Vds (pF)
    0.2@50V
  • Typical Output Capacitance @ Vds (pF)
    7.5@50V
  • Maximum Output Power (W)
    35(Typ)
  • Typical Power Gain (dB)
    27
  • Maximum Frequency (MHz)
    600
  • Minimum Frequency (MHz)
    10
  • Typical Drain Efficiency (%)
    75
  • Minimum Operating Temperature (°C)
    -65
  • Maximum Operating Temperature (°C)
    225
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    3.6
  • Package Width
    9.96
  • Package Length
    20.57
  • PCB changed
    4
  • Standard Package Name
    SO
  • Supplier Package
    HSOP-F
  • Pin Count
    4
  • Lead Shape
    Flat

Documentation and Resources

Datasheets
Design resources