RF FETs

BLL6H0514L-130,112

Trans RF MOSFET N-CH 100V 18A 3-Pin CDFM Bulk

Ampleon

Product Technical Specifications

• EU RoHS

  Compliant

• ECCN (US)

  EAR99

• Part Status

  Active-Unconfirmed

• HTS

  8541.29.00.75

• Automotive

  Unknown

• PPAP

  Unknown

• Configuration

  Single

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Mode of Operation

  Pulsed RF

• Process Technology

  0.14um

• Maximum Drain-Source Voltage (V)

  100

• Maximum Gate-Source Voltage (V)

  13

• Maximum Gate Threshold Voltage (V)

  2.25

• Maximum VSWR

  5

• Maximum Continuous Drain Current (A)

  18

• Maximum Gate-Source Leakage Current (nA)

  140

• Maximum IDSS (uA)

  1.4

• Maximum Drain-Source Resistance (mOhm)

  275@8.5V

• Typical Forward Transconductance (S)

  1.578

• Maximum Output Power (W)

  130(Min)

• Typical Power Gain (dB)

  17

• Maximum Frequency (MHz)

  1400

• Minimum Frequency (MHz)

  500

• Typical Fall Time (ns)

  6

• Typical Rise Time (ns)

  20

• Typical Drain Efficiency (%)

  50

• Minimum Operating Temperature (°C)

  -65

• Maximum Operating Temperature (°C)

  200

• Packaging

  Bulk

• Mounting

  Screw

• Package Height

  4.65(Max)

• Package Width

  9.91(Max)

• Package Length

  20.45(Max)

• PCB changed

  3

• Supplier Package

  CDFM

• Pin Count

  3