RF FETs

BLF9G38-10GJ

Trans RF MOSFET N-CH 65V 3-Pin CDFM T/R

Ampleon

Product Technical Specifications

• EU RoHS

  Compliant

• ECCN (US)

  EAR99

• Part Status

  Obsolete

• HTS

  8541.29.00.75

• Automotive

  Unknown

• PPAP

  Unknown

• Configuration

  Single

• Type

  MOSFET

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Mode of Operation

  2-Carrier W-CDMA

• Process Technology

  0.14um

• Maximum Drain-Source Voltage (V)

  65

• Maximum Gate-Source Voltage (V)

  13

• Maximum VSWR

  10

• Maximum Drain-Source Resistance (mOhm)

  2153@6.25V

• Typical Forward Transconductance (S)

  0.91(Min)

• Maximum Output Power (W)

  2(Typ)

• Typical Power Gain (dB)

  17.7

• Maximum Frequency (MHz)

  3600

• Minimum Frequency (MHz)

  3400

• Typical Drain Efficiency (%)

  26

• Minimum Operating Temperature (°C)

  -65

• Maximum Operating Temperature (°C)

  225

• Packaging

  Tape and Reel

• Mounting

  Surface Mount

• Package Height

  3.15(Max)

• Package Width

  6.93(Max)

• Package Length

  6.93(Max)

• PCB changed

  3

• Supplier Package

  CDFM

• Pin Count

  3