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BFU710F115|NXP|simage
BFU710F115|NXP|limage
RF BJT

BFU710F,115

Trans RF BJT NPN 2.8V 0.01A 136mW 4-Pin DFP T/R

NXP Semiconductors
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    LTB
  • HTS
    COMPONENTS
  • SVHC
    Yes
  • Automotive
    No
  • PPAP
    No
  • Type
    NPN
  • Material
    SiGe
  • Configuration
    Single Dual Emitter
  • Number of Elements per Chip
    1
  • Maximum Collector-Base Voltage (V)
    10
  • Maximum Collector-Emitter Voltage (V)
    2.8
  • Maximum Collector-Emitter Voltage Range (V)
    <20
  • Maximum Base-Emitter Voltage (V)
    1
  • Maximum DC Collector Current (A)
    0.01
  • Maximum DC Collector Current Range (A)
    0.001 to 0.06
  • Maximum Collector Cut-Off Current (nA)
    100
  • Operational Bias Conditions
    2.5V/10mA
  • Minimum DC Current Gain
    200@1mA@2V
  • Minimum DC Current Gain Range
    200 to 300
  • Typical Input Capacitance (pF)
    0.262
  • Typical Output Capacitance (pF)
    0.021
  • Maximum Power Dissipation (mW)
    136
  • Maximum Power 1dB Compression (dBm)
    5.5(Typ)
  • Typical Power Gain (dB)
    30
  • Typical 3rd Order Intercept Point (dBm)
    19.5
  • Maximum Transition Frequency (MHz)
    43000(Typ)
  • Maximum Noise Figure (dB)
    1.45(Typ)
  • Minimum Operating Temperature (°C)
    -65
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    0.75(Max)
  • Package Width
    1.35(Max)
  • Package Length
    2.2(Max)
  • PCB changed
    4
  • Supplier Package
    DFP
  • Pin Count
    4

Documentation and Resources

Datasheets
Design resources