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BFU530AVL|NXP|simage
BFU530AVL|NXP|limage
RF BJT

BFU530AVL

Trans RF BJT NPN 16V 0.065A 450mW Automotive AEC-Q101 3-Pin TO-236AB T/R

NXP Semiconductors
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Obsolete
  • HTS
    8541.21.00.75
  • SVHC
    Yes
  • Automotive
    Yes
  • PPAP
    Yes
  • Type
    NPN
  • Material
    Si
  • Configuration
    Single
  • Number of Elements per Chip
    1
  • Maximum Collector-Base Voltage (V)
    30
  • Maximum Collector-Emitter Voltage (V)
    16
  • Maximum Collector-Emitter Voltage Range (V)
    <20
  • Maximum Base-Emitter Voltage (V)
    3
  • Maximum DC Collector Current (A)
    0.065
  • Maximum DC Collector Current Range (A)
    0.06 to 0.12
  • Maximum Collector Cut-Off Current (nA)
    1(Typ)
  • Operational Bias Conditions
    8V/15mA
  • Minimum DC Current Gain
    60@10mA@8V
  • Minimum DC Current Gain Range
    50 to 120
  • Typical Input Capacitance (pF)
    0.83
  • Typical Output Capacitance (pF)
    0.67
  • Maximum Power Dissipation (mW)
    450
  • Maximum Power 1dB Compression (dBm)
    10.5(Typ)
  • Typical Power Gain (dB)
    23.5
  • Typical 3rd Order Intercept Point (dBm)
    20
  • Maximum Transition Frequency (MHz)
    11000(Typ)
  • Maximum Noise Figure (dB)
    1.1(Min)
  • Minimum Operating Temperature (°C)
    -40
  • Maximum Operating Temperature (°C)
    150
  • Supplier Temperature Grade
    Automotive
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    1(Max)
  • Package Width
    1.4(Max)
  • Package Length
    3(Max)
  • PCB changed
    3
  • Standard Package Name
    TO
  • Supplier Package
    TO-236AB
  • Pin Count
    3
  • Lead Shape
    Gull-wing

Documentation and Resources

Datasheets
Design resources