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BFT25215|NXP|limage
BFT25215|NXP|simage
RF BJT

BFT25,215

Trans RF BJT NPN 5V 0.0065A 30mW 3-Pin TO-236AB T/R

NXP Semiconductors
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Obsolete
  • HTS
    8541.21.00.75
  • SVHC
    Yes
  • Automotive
    No
  • PPAP
    No
  • Type
    NPN
  • Configuration
    Single
  • Number of Elements per Chip
    1
  • Maximum Collector-Base Voltage (V)
    8
  • Maximum Collector-Emitter Voltage (V)
    5
  • Maximum Collector-Emitter Voltage Range (V)
    <20
  • Maximum Base-Emitter Voltage (V)
    2
  • Maximum DC Collector Current (A)
    0.0065
  • Maximum DC Collector Current Range (A)
    0.001 to 0.06
  • Maximum Collector Cut-Off Current (nA)
    50
  • Operational Bias Conditions
    1V/1mA
  • Minimum DC Current Gain
    20@10uA@1V|20@1mA@1V
  • Minimum DC Current Gain Range
    2 to 30
  • Maximum Power Dissipation (mW)
    30
  • Typical Power Gain (dB)
    18
  • Maximum Transition Frequency (MHz)
    2300(Typ)
  • Maximum Noise Figure (dB)
    5.5(Typ)
  • Minimum Operating Temperature (°C)
    -65
  • Maximum Operating Temperature (°C)
    175
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    1(Max)
  • Package Width
    1.4(Max)
  • Package Length
    3(Max)
  • PCB changed
    3
  • Standard Package Name
    TO
  • Supplier Package
    TO-236AB
  • Pin Count
    3
  • Lead Shape
    Gull-wing

Documentation and Resources

Datasheets
Design resources