RF BJT

BFP650FH6327XTSA1

Trans RF BJT NPN 4V 0.15A 500mW 4-Pin TSFP T/R Automotive AEC-Q101

Infineon Technologies AG

Product Technical Specifications

• EU RoHS

  Compliant

• ECCN (US)

  EAR99

• Part Status

  LTB

• HTS

  8541.29.00.55

• Automotive

  Yes

• PPAP

  Unknown

• Type

  NPN

• Material

  SiGe

• Configuration

  Single Dual Emitter

• Number of Elements per Chip

  1

• Maximum Collector-Base Voltage (V)

  13

• Maximum Collector-Emitter Voltage (V)

  4

• Maximum Collector-Emitter Voltage Range (V)

  <20

• Maximum Base-Emitter Voltage (V)

  1.2

• Maximum DC Collector Current (A)

  0.15

• Maximum DC Collector Current Range (A)

  0.12 to 0.5

• Maximum Emitter Cut-Off Current (nA)

  10000

• Maximum Collector Cut-Off Current (nA)

  100

• Operational Bias Conditions

  3V/80mA

• Minimum DC Current Gain

  110@80mA@3V

• Minimum DC Current Gain Range

  50 to 120

• Typical Input Capacitance (pF)

  1.3

• Typical Output Capacitance (pF)

  0.26

• Maximum Power Dissipation (mW)

  500

• Maximum Power 1dB Compression (dBm)

  17.5(Typ)

• Typical Power Gain (dB)

  21.5

• Typical 3rd Order Intercept Point (dBm)

  31

• Maximum Noise Figure (dB)

  1.9(Min)

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Supplier Temperature Grade

  Automotive

• Packaging

  Tape and Reel

• Mounting

  Surface Mount

• Package Height

  0.55

• Package Width

  0.8

• Package Length

  1.4

• PCB changed

  4

• Standard Package Name

  TSFP

• Supplier Package

  TSFP

• Pin Count

  4