Arrow Electronic Components Online
BFP640H6327XTSA1|INFINEON|simage
BFP640H6327XTSA1|INFINEON|limage
Top Searched
RF BJT

BFP640H6327XTSA1

Trans RF BJT NPN 4.1V 0.05A 200mW 4-Pin(3+Tab) SOT-343 T/R Automotive AEC-Q101

Infineon Technologies AG
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    NRND
  • HTS
    COMPONENTS
  • Automotive
    Yes
  • PPAP
    Unknown
  • Type
    NPN
  • Material
    SiGe
  • Configuration
    Single Dual Emitter
  • Number of Elements per Chip
    1
  • Maximum Collector-Base Voltage (V)
    13
  • Maximum Collector-Emitter Voltage (V)
    4.1
  • Maximum Collector-Emitter Voltage Range (V)
    <20
  • Maximum Base-Emitter Voltage (V)
    1.2
  • Maximum DC Collector Current (A)
    0.05
  • Maximum DC Collector Current Range (A)
    0.001 to 0.06
  • Maximum Emitter Cut-Off Current (nA)
    3000
  • Maximum Collector Cut-Off Current (nA)
    100
  • Operational Bias Conditions
    3V/30mA
  • Minimum DC Current Gain
    110@30mA@3V
  • Minimum DC Current Gain Range
    50 to 120
  • Maximum Power Dissipation (mW)
    200
  • Maximum Power 1dB Compression (dBm)
    13(Typ)
  • Typical Power Gain (dB)
    24
  • Typical 3rd Order Intercept Point (dBm)
    26.5
  • Maximum Transition Frequency (MHz)
    40000(Typ)
  • Maximum Noise Figure (dB)
    1.2(Typ)
  • Minimum Operating Temperature (°C)
    -65
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    0.9(Max)
  • Package Width
    1.25
  • Package Length
    2
  • PCB changed
    3
  • Tab
    Tab
  • Standard Package Name
    SOT
  • Supplier Package
    SOT-343
  • Pin Count
    4
  • Lead Shape
    Gull-wing

Documentation and Resources

Datasheets
Design resources