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GP BJT

BDS16

Trans GP BJT NPN 120V 8A 43750mW 3-Pin(3+Tab) TO-257AB

TT Electronics / Semelab
Datasheets 

Product Technical Specifications
  • EU RoHS
    Supplier Unconfirmed
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.29.00.55
  • Automotive
    No
  • PPAP
    No
  • Type
    NPN
  • Category
    Bipolar Power
  • Material
    Si
  • Configuration
    Single
  • Number of Elements per Chip
    1
  • Maximum Collector-Base Voltage (V)
    120
  • Maximum Collector-Emitter Voltage (V)
    120
  • Maximum Base-Emitter Voltage (V)
    5
  • Maximum Collector-Emitter Saturation Voltage (V)
    0.4@0.05A@0.5A|1.5@0.4A@4A
  • Maximum DC Collector Current (A)
    8
  • Minimum DC Current Gain
    40@0.5A@2V|15@4A@2V
  • Maximum Power Dissipation (mW)
    43750
  • Minimum Operating Temperature (°C)
    -65
  • Maximum Operating Temperature (°C)
    200
  • Mounting
    Through Hole
  • Package Height
    10.92(Max)
  • Package Width
    5.33(Max)
  • Package Length
    10.92(Max)
  • PCB changed
    3
  • Tab
    Tab
  • Supplier Package
    TO-257AB
  • Pin Count
    3

Documentation and Resources

Datasheets
Design resources