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BD239C|ONSEMI|simage
BD239C|ONSEMI|limage
GP BJT

BD239C

Trans GP BJT NPN 100V 2A 30000mW 3-Pin(3+Tab) TO-220 Bag

onsemi
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    Obsolete
  • HTS
    8541290095
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    No
  • PPAP
    No
  • Type
    NPN
  • Category
    Bipolar Power
  • Material
    Si
  • Configuration
    Single
  • Number of Elements per Chip
    1
  • Maximum Collector-Emitter Voltage (V)
    100
  • Maximum Base-Emitter Voltage (V)
    5
  • Operating Junction Temperature (°C)
    150
  • Maximum Collector-Emitter Saturation Voltage (V)
    0.7@0.2A@1A
  • Maximum DC Collector Current (A)
    2
  • Minimum DC Current Gain
    40@200mA@4V|15@1A@4V
  • Maximum Power Dissipation (mW)
    30000
  • Minimum Operating Temperature (°C)
    -65
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Bag
  • Mounting
    Through Hole
  • Package Height
    9.4(Max)
  • Package Width
    4.7(Max)
  • Package Length
    10.67(Max)
  • PCB changed
    3
  • Tab
    Tab
  • Standard Package Name
    TO
  • Supplier Package
    TO-220
  • Pin Count
    3
  • Lead Shape
    Through Hole

Documentation and Resources

Datasheets
Design resources