MOSFETs

AUIRF7799L2TR

Trans MOSFET N-CH 250V 6.6A 15-Pin Direct-FET L8 T/R Automotive AEC-Q101

Infineon Technologies AG

Product Technical Specifications

• EU RoHS

  Compliant

• ECCN (US)

  EAR99

• Part Status

  LTB

• HTS

  8541.29.00.55

• Automotive

  Yes

• PPAP

  Unknown

• Category

  Power MOSFET

• Configuration

  Single Hex Drain Octal Source

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  250

• Maximum Gate-Source Voltage (V)

  ±30

• Maximum Gate Threshold Voltage (V)

  5

• Maximum Continuous Drain Current (A)

  6.6

• Maximum Gate-Source Leakage Current (nA)

  100

• Maximum IDSS (uA)

  20

• Maximum Drain-Source Resistance (mOhm)

  38@10V

• Typical Gate Charge @ Vgs (nC)

  110@10V

• Typical Gate Charge @ 10V (nC)

  110

• Typical Input Capacitance @ Vds (pF)

  6714@25V

• Maximum Power Dissipation (mW)

  4300

• Typical Fall Time (ns)

  26.6

• Typical Rise Time (ns)

  33.5

• Typical Turn-Off Delay Time (ns)

  73.9

• Typical Turn-On Delay Time (ns)

  36.3

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  175

• Supplier Temperature Grade

  Automotive

• Packaging

  Tape and Reel

• Typical Drain-Source Resistance @ 25°C (mOhm)

  32@10V

• Mounting

  Surface Mount

• Package Height

  0.49(Max)

• Package Width

  9.15(Max)

• Package Length

  7.1(Max)

• PCB changed

  15

• Supplier Package

  Direct-FET L8

• Pin Count

  15

• Lead Shape

  No Lead