MOSFETs

AUIRF7341QTR

Trans MOSFET N-CH Si 55V 5.1A 8-Pin SOIC T/R Automotive AEC-Q101

Infineon Technologies AG

Product Technical Specifications

• EU RoHS

  Compliant

• ECCN (US)

  EAR99

• Part Status

  Obsolete

• HTS

  COMPONENTS

• Automotive

  Yes

• PPAP

  Unknown

• Category

  Power MOSFET

• Material

  Si

• Configuration

  Dual Dual Drain

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  2

• Maximum Drain-Source Voltage (V)

  55

• Maximum Gate-Source Voltage (V)

  ±20

• Maximum Gate Threshold Voltage (V)

  3

• Maximum Continuous Drain Current (A)

  5.1

• Maximum Drain-Source Resistance (mOhm)

  50@10V

• Typical Gate Charge @ Vgs (nC)

  29@10V

• Typical Gate Charge @ 10V (nC)

  29

• Typical Input Capacitance @ Vds (pF)

  780@25V

• Maximum Power Dissipation (mW)

  2400

• Typical Fall Time (ns)

  12.5

• Typical Rise Time (ns)

  7.7

• Typical Turn-Off Delay Time (ns)

  31

• Typical Turn-On Delay Time (ns)

  9.2

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  175

• Supplier Temperature Grade

  Automotive

• Packaging

  Tape and Reel

• Typical Drain-Source Resistance @ 25°C (mOhm)

  56@4.5V|43@10V

• Mounting

  Surface Mount

• Package Height

  1.5(Max)

• Package Width

  4(Max)

• Package Length

  5(Max)

• PCB changed

  8

• Standard Package Name

  SO

• Supplier Package

  SOIC

• Pin Count

  8

• Lead Shape

  Gull-wing